книги / Микроструктуры интегральной электроники

Р а зд е л

III. СТРУКТУРЫ НА СВЕРХПРОВОДНИКАХ . . . .

242

Глава 6.

Структуры сверхпроводник-переходный слой-сверхпроводник

242

61.

2

Физика

джозефсоновскси о

перехода

....................................

242

245

6

Процессы в переходе Джозефсона при воздействии магнитного поля

6 3.

Эффект квантовой интерференции в структуре с переходами Джо­

249

6

4

зефсона . . .

........................

. . .

.

Токоперенос в переходе Джозефсона при воздействии электромаг­

250

6

5.

нитного

поля Нестационарный эффект Джозефсона . . . .

.

Неравновесные явления при токоиереносе

в СИС

структуре .

251

6

6.

Явления в СПС структурах при токоиереносе..........................

259

67.

Джозефсоновский ток в структуре С полупроводник с инверсионным

6

8.

сл о ем -С ........................

. . .

.

........................263

Квантовые эффекты и диссипация в джозефсоновских переходах ма­

266

6 9

лых

р азм ер о в .............................................................

•

Токоперенос в туннельных джозефсоновских переходах малых раз­

287

меров с

вихрями А брикосова................................

. . .

Заключение......................................

................................................288

Список литературы ...................................................................

•

289

CONTENTS

Preface

.

...................................................................................

3

P a r t

I SEMICONDUCTOR SURFACE BARRIER STRUCTURES . .

4

Chapter

1. Metal-semiconductor

(MS)

Schottky barrier

structures

5

1 1.

Potential barrier

formation

in

metal-semiconductor

structure

.

5

1.2. Current transport mechanisms in the metal-crystalline semiconductor

13

1.3.

structures . . .

.

. . . . . . . .

Current transport

mechanisms in the metal-amorphous semiconductor

1

4.

s tru c tu re s ......................................

....................................19

Specifity of the barrier formation and current

transport in the

metal-

32

1

5

semiconductor compound stru ctu res............................................................

an alternating signal

Effects in the metal-semiconductor structures at

37

16

Proscsses in the ohmic MS stru c tu re s .......................

. .

.

41

1

7. Effects in the MS structures underillum ination......................................

43

1.8. Noise in the MS structures .................................................................

. .

hi

1.9

Fundamental physical size limitations of the MS structures

54

1

10 Processes in the MS structures associated

with

size reduction

. .

57

111. Physical principles of MS structureapplications......................................

59

Chapter 2. Metal-n-(p)-n+(p+)-semiconductor and metabn+(p+)-p(n)-semi­

51

conductor stru ctu res........................................................................

2

1.

Potential profile and current transport in

the

M-n(p)-n+(p+)-S

Mott

2.2.

barrier stru c tu re s ..............................................................................

Barrier formation and current transport in the Mn^(p+)-p(n)-S struc­

2

3

tures ............................................

..........................................

Minority carrier injection in the M-p1-n-S

s tru c tu re .....................

2

4 Space charge region properties

and current transport in the M-p+-n-S

2.5

structure with deep levels in the

semiconductor.............................

69

C-V characteristic of the M-p^-n-'S

structure with deep levels in the

se­

2

miconductor . . . .

. . .

................................... 77

b, Simulation of the characteristics

for the

M-p+-n-S structure

with

2.7

planar nonuniform p ro p e rtie s

..................................................................

78

Space charge region parameter evaluation

for the M-n(n+)-n+ (n)-S

structures...........................................................

87

2 9.

distribution

in thesemiconductor..............................................................

90

Limitations

ofminimal

structure sizes

ele­

91

2.10. Effectiveness of the structure applications in the microelectronic

92

ments

.

.

.

. . .

. . .

.

Chapter 3. Metal-thin dielectric-semiconductor

tunnel structures

. .

.

93

3 1

2

Barrier formation in the semiconductor space charge

region

. .

95

3

Recharge of the localized

electronic states at the

thin dielectric-seini-

3

3

conducor

in te rfa c e ..........................

........................................ 100

Parameter

characterization for the space charge region with a

semi­

102

3

4.

conductor

inversion layer

Parameter characterization for the space charge region in the semicon­

105

3.5.

ductor with

a graded

gap

l a y e r ...........................................................

Parameter calculation for the space charge region in the semiconduc­

108

tor with

an

accumulation

l a y e r ............................................................

tor Schottky barrier stru c tu re s ..............................

. . . .

112

3.7. Carrier tunneling

through the thin dielectric and space

charge region

121

3.8.

barriers assisted by the surface

slates .

barrier of

.

.

dielectric

Carrier tunneling

through

a

complicated

the

thin

122

3

9. Charge

transfer through

an

osciliating

potential

barrier

. .

.

124

3 10

Current

transport

in the

metal-thin dielectricamorphous

semiconductor

127

3.11

s tr u c tu r e s ........................................................

.

.

Tunneling conductivity oscillations of the M-thin dielectrics

structures

129

3 12.

in

the

quantized

magnetic

fields

.

. . . .

.

Processes in the metal-thin dielectric-semiconductor structures due

to

131

3 13

minority

carrier injection

Optical effects in the metal-thin dielectric-semiconductor structures

133

3 14. Coherent

one-electron phenomena

in the

metal-thin dielectric-semicon­

3 15

ductor

microand

submicrostructures

.

..............................138

Mesoscopies of the metal-thin

dielectric-semiconductor

structures

143

316.

Physical principles of the metal-thin dielectric-semiconductor based

elements

.

.

........................................................... 144

P a r t

IL

SEMICONDUCTOR STRUCTURES

WITH THE

MULTIPLE

147

POTENTIAL BARRIER ANDQUANTUM WELL SUSTEMS

Chapter

4.

Single and

coupled

quantum

well

structures

. . .

148

4.1.

Energy hand model of the single quantum

well structure . .

.

149

4 2.

Electron-electron interaction and interlevel transitions in

the

quantum

4

3.

w e ll .......................................

well

e x c ito n

. 1 5 1

Quasi-two-dimensional quantum

15.3

4

4

Spin

relaxation

of the

quantum welle le c tro n s

...................................

155

4

5

Piocesses of the nonequilibrium carrier transitions quantum wcllsemi-

15.8

4.6.

conductor

for an

inverse

quantum

well

population . .

Conditions

162

4.7.

Nonlinear

absorption spectrum

in

the

structures with quantum well

170

4.8.

subband

f illin g ..........................................................................................

the

quantum

well

structures . . .

Electrooptic modulation in

173

4.9.

Quantum

well screening

at

the

charge

tiansfer

. . . .

.

177

4

10.Electron

resonant

tunneling through the multiple barrier system

180

4.11. Electron resonant

tunneling

assisted by

a

quantum

well

level .

.

183

4.12. Development mechanism

of the S-type negative differential conducti­

195

4

vity

in

the

multilayer

structures.............................................................

waves

along

the

quantum

13 Effects

in

the

structures

with

electron

196

4 14.

w

e l l s

..........................................................

w

e l l s

Stark effect in the coupled quantum

198

4 15.

Multifunctionality of the quantumwell andbarrier based element*

200

Chapter

5.

Superlattices...................................................................................

203

5 1.

Superlaitice

energy band

model

m

the

su­

203

5.2.

Collective two-dimensional electron (hole) gas excitations

214

5

3

perlattices ...................................................................................................

transfer

in the

superlattice* .

.

Quantum effects of the charge

215

5.4. Bistability of the resonant-tunneling electron current in the supeilattices

218

5.5.

Superlattice

kinetic effects

in

the high

electric

fields .

. .

.

221

5.6.

Superlattice

kinetic effects

in

the quantized magnetic

field

224

5

7. Electrostatic modes in the superlatiices.............................

.

.

225

5

8.

Magnetostatic

modes

in

the superlatiices . . . .

.

229

5.9.

Effects in spin superlattices

,

and applications

.

.

231

5 10. Quasi atomic superlaitice properties

for

234

5.11.

Physical principles

of superlaitice

element

creation

mit ro(nano)

235

e le c tro n ic s ...................................................................

.

P a r t

III

SUPERCONDUCTOR

STRUCTURES

.

. .

.

242

Chapter 6. Superconductor-interlayer-superconductor structures (SIS)

. .

242

6.1.

Josephson

junction p h y s ic s ....................................................................

the

magnetic fields . .

.

242

6 2

Josephson junction processes

in

245

6.3.

Quantum intcrfeience

effect

irithe Josephson

junctions

*tiuctme

249

6

4 Currc'4 transport in

the Josephson

junction

under the

influence of an

250

6.5

electromagnetic

field.

Norisiationai y

Josephson effect

.

.

Nonequilibrimn

effects

at

the

current

transport

in SIS's . .

.

251

6

the

current

transport

. . .

. . .

.

.

259

6. Effects

in

superconductor semiconducloi -superconductor

shuotures at

259

6

7

ihe current

transport.

. . .

. . .

. . .

.

Josephson current in the superconductor-semiconductor

inversion

layer-

263

6

superconductor

structures

m

.

.

. . .

.

8Quantum effects

and

dissipation

the small

Josephson

junctions

266

ê.9

Current

transport in

the

small

Josephson junctions with Abrikosov

287

vortices

. . .

.

.

. . . .

.

.

S u m m ary ...........................................

.

. .

.

288

B ibliography...........................................

.

. .

.

289