- •Preface
- •Imaging Microscopic Features
- •Measuring the Crystal Structure
- •References
- •Contents
- •1.4 Simulating the Effects of Elastic Scattering: Monte Carlo Calculations
- •What Are the Main Features of the Beam Electron Interaction Volume?
- •How Does the Interaction Volume Change with Composition?
- •How Does the Interaction Volume Change with Incident Beam Energy?
- •How Does the Interaction Volume Change with Specimen Tilt?
- •1.5 A Range Equation To Estimate the Size of the Interaction Volume
- •References
- •2: Backscattered Electrons
- •2.1 Origin
- •2.2.1 BSE Response to Specimen Composition (η vs. Atomic Number, Z)
- •SEM Image Contrast with BSE: “Atomic Number Contrast”
- •SEM Image Contrast: “BSE Topographic Contrast—Number Effects”
- •2.2.3 Angular Distribution of Backscattering
- •Beam Incident at an Acute Angle to the Specimen Surface (Specimen Tilt > 0°)
- •SEM Image Contrast: “BSE Topographic Contrast—Trajectory Effects”
- •2.2.4 Spatial Distribution of Backscattering
- •Depth Distribution of Backscattering
- •Radial Distribution of Backscattered Electrons
- •2.3 Summary
- •References
- •3: Secondary Electrons
- •3.1 Origin
- •3.2 Energy Distribution
- •3.3 Escape Depth of Secondary Electrons
- •3.8 Spatial Characteristics of Secondary Electrons
- •References
- •4: X-Rays
- •4.1 Overview
- •4.2 Characteristic X-Rays
- •4.2.1 Origin
- •4.2.2 Fluorescence Yield
- •4.2.3 X-Ray Families
- •4.2.4 X-Ray Nomenclature
- •4.2.6 Characteristic X-Ray Intensity
- •Isolated Atoms
- •X-Ray Production in Thin Foils
- •X-Ray Intensity Emitted from Thick, Solid Specimens
- •4.3 X-Ray Continuum (bremsstrahlung)
- •4.3.1 X-Ray Continuum Intensity
- •4.3.3 Range of X-ray Production
- •4.4 X-Ray Absorption
- •4.5 X-Ray Fluorescence
- •References
- •5.1 Electron Beam Parameters
- •5.2 Electron Optical Parameters
- •5.2.1 Beam Energy
- •Landing Energy
- •5.2.2 Beam Diameter
- •5.2.3 Beam Current
- •5.2.4 Beam Current Density
- •5.2.5 Beam Convergence Angle, α
- •5.2.6 Beam Solid Angle
- •5.2.7 Electron Optical Brightness, β
- •Brightness Equation
- •5.2.8 Focus
- •Astigmatism
- •5.3 SEM Imaging Modes
- •5.3.1 High Depth-of-Field Mode
- •5.3.2 High-Current Mode
- •5.3.3 Resolution Mode
- •5.3.4 Low-Voltage Mode
- •5.4 Electron Detectors
- •5.4.1 Important Properties of BSE and SE for Detector Design and Operation
- •Abundance
- •Angular Distribution
- •Kinetic Energy Response
- •5.4.2 Detector Characteristics
- •Angular Measures for Electron Detectors
- •Elevation (Take-Off) Angle, ψ, and Azimuthal Angle, ζ
- •Solid Angle, Ω
- •Energy Response
- •Bandwidth
- •5.4.3 Common Types of Electron Detectors
- •Backscattered Electrons
- •Passive Detectors
- •Scintillation Detectors
- •Semiconductor BSE Detectors
- •5.4.4 Secondary Electron Detectors
- •Everhart–Thornley Detector
- •Through-the-Lens (TTL) Electron Detectors
- •TTL SE Detector
- •TTL BSE Detector
- •Measuring the DQE: BSE Semiconductor Detector
- •References
- •6: Image Formation
- •6.1 Image Construction by Scanning Action
- •6.2 Magnification
- •6.3 Making Dimensional Measurements With the SEM: How Big Is That Feature?
- •Using a Calibrated Structure in ImageJ-Fiji
- •6.4 Image Defects
- •6.4.1 Projection Distortion (Foreshortening)
- •6.4.2 Image Defocusing (Blurring)
- •6.5 Making Measurements on Surfaces With Arbitrary Topography: Stereomicroscopy
- •6.5.1 Qualitative Stereomicroscopy
- •Fixed beam, Specimen Position Altered
- •Fixed Specimen, Beam Incidence Angle Changed
- •6.5.2 Quantitative Stereomicroscopy
- •Measuring a Simple Vertical Displacement
- •References
- •7: SEM Image Interpretation
- •7.1 Information in SEM Images
- •7.2.2 Calculating Atomic Number Contrast
- •Establishing a Robust Light-Optical Analogy
- •Getting It Wrong: Breaking the Light-Optical Analogy of the Everhart–Thornley (Positive Bias) Detector
- •Deconstructing the SEM/E–T Image of Topography
- •SUM Mode (A + B)
- •DIFFERENCE Mode (A−B)
- •References
- •References
- •9: Image Defects
- •9.1 Charging
- •9.1.1 What Is Specimen Charging?
- •9.1.3 Techniques to Control Charging Artifacts (High Vacuum Instruments)
- •Observing Uncoated Specimens
- •Coating an Insulating Specimen for Charge Dissipation
- •Choosing the Coating for Imaging Morphology
- •9.2 Radiation Damage
- •9.3 Contamination
- •References
- •10: High Resolution Imaging
- •10.2 Instrumentation Considerations
- •10.4.1 SE Range Effects Produce Bright Edges (Isolated Edges)
- •10.4.4 Too Much of a Good Thing: The Bright Edge Effect Hinders Locating the True Position of an Edge for Critical Dimension Metrology
- •10.5.1 Beam Energy Strategies
- •Low Beam Energy Strategy
- •High Beam Energy Strategy
- •Making More SE1: Apply a Thin High-δ Metal Coating
- •Making Fewer BSEs, SE2, and SE3 by Eliminating Bulk Scattering From the Substrate
- •10.6 Factors That Hinder Achieving High Resolution
- •10.6.2 Pathological Specimen Behavior
- •Contamination
- •Instabilities
- •References
- •11: Low Beam Energy SEM
- •11.3 Selecting the Beam Energy to Control the Spatial Sampling of Imaging Signals
- •11.3.1 Low Beam Energy for High Lateral Resolution SEM
- •11.3.2 Low Beam Energy for High Depth Resolution SEM
- •11.3.3 Extremely Low Beam Energy Imaging
- •References
- •12.1.1 Stable Electron Source Operation
- •12.1.2 Maintaining Beam Integrity
- •12.1.4 Minimizing Contamination
- •12.3.1 Control of Specimen Charging
- •12.5 VPSEM Image Resolution
- •References
- •13: ImageJ and Fiji
- •13.1 The ImageJ Universe
- •13.2 Fiji
- •13.3 Plugins
- •13.4 Where to Learn More
- •References
- •14: SEM Imaging Checklist
- •14.1.1 Conducting or Semiconducting Specimens
- •14.1.2 Insulating Specimens
- •14.2 Electron Signals Available
- •14.2.1 Beam Electron Range
- •14.2.2 Backscattered Electrons
- •14.2.3 Secondary Electrons
- •14.3 Selecting the Electron Detector
- •14.3.2 Backscattered Electron Detectors
- •14.3.3 “Through-the-Lens” Detectors
- •14.4 Selecting the Beam Energy for SEM Imaging
- •14.4.4 High Resolution SEM Imaging
- •Strategy 1
- •Strategy 2
- •14.5 Selecting the Beam Current
- •14.5.1 High Resolution Imaging
- •14.5.2 Low Contrast Features Require High Beam Current and/or Long Frame Time to Establish Visibility
- •14.6 Image Presentation
- •14.6.1 “Live” Display Adjustments
- •14.6.2 Post-Collection Processing
- •14.7 Image Interpretation
- •14.7.1 Observer’s Point of View
- •14.7.3 Contrast Encoding
- •14.8.1 VPSEM Advantages
- •14.8.2 VPSEM Disadvantages
- •15: SEM Case Studies
- •15.1 Case Study: How High Is That Feature Relative to Another?
- •15.2 Revealing Shallow Surface Relief
- •16.1.2 Minor Artifacts: The Si-Escape Peak
- •16.1.3 Minor Artifacts: Coincidence Peaks
- •16.1.4 Minor Artifacts: Si Absorption Edge and Si Internal Fluorescence Peak
- •16.2 “Best Practices” for Electron-Excited EDS Operation
- •16.2.1 Operation of the EDS System
- •Choosing the EDS Time Constant (Resolution and Throughput)
- •Choosing the Solid Angle of the EDS
- •Selecting a Beam Current for an Acceptable Level of System Dead-Time
- •16.3.1 Detector Geometry
- •16.3.2 Process Time
- •16.3.3 Optimal Working Distance
- •16.3.4 Detector Orientation
- •16.3.5 Count Rate Linearity
- •16.3.6 Energy Calibration Linearity
- •16.3.7 Other Items
- •16.3.8 Setting Up a Quality Control Program
- •Using the QC Tools Within DTSA-II
- •Creating a QC Project
- •Linearity of Output Count Rate with Live-Time Dose
- •Resolution and Peak Position Stability with Count Rate
- •Solid Angle for Low X-ray Flux
- •Maximizing Throughput at Moderate Resolution
- •References
- •17: DTSA-II EDS Software
- •17.1 Getting Started With NIST DTSA-II
- •17.1.1 Motivation
- •17.1.2 Platform
- •17.1.3 Overview
- •17.1.4 Design
- •Simulation
- •Quantification
- •Experiment Design
- •Modeled Detectors (. Fig. 17.1)
- •Window Type (. Fig. 17.2)
- •The Optimal Working Distance (. Figs. 17.3 and 17.4)
- •Elevation Angle
- •Sample-to-Detector Distance
- •Detector Area
- •Crystal Thickness
- •Number of Channels, Energy Scale, and Zero Offset
- •Resolution at Mn Kα (Approximate)
- •Azimuthal Angle
- •Gold Layer, Aluminum Layer, Nickel Layer
- •Dead Layer
- •Zero Strobe Discriminator (. Figs. 17.7 and 17.8)
- •Material Editor Dialog (. Figs. 17.9, 17.10, 17.11, 17.12, 17.13, and 17.14)
- •17.2.1 Introduction
- •17.2.2 Monte Carlo Simulation
- •17.2.4 Optional Tables
- •References
- •18: Qualitative Elemental Analysis by Energy Dispersive X-Ray Spectrometry
- •18.1 Quality Assurance Issues for Qualitative Analysis: EDS Calibration
- •18.2 Principles of Qualitative EDS Analysis
- •Exciting Characteristic X-Rays
- •Fluorescence Yield
- •X-ray Absorption
- •Si Escape Peak
- •Coincidence Peaks
- •18.3 Performing Manual Qualitative Analysis
- •Beam Energy
- •Choosing the EDS Resolution (Detector Time Constant)
- •Obtaining Adequate Counts
- •18.4.1 Employ the Available Software Tools
- •18.4.3 Lower Photon Energy Region
- •18.4.5 Checking Your Work
- •18.5 A Worked Example of Manual Peak Identification
- •References
- •19.1 What Is a k-ratio?
- •19.3 Sets of k-ratios
- •19.5 The Analytical Total
- •19.6 Normalization
- •19.7.1 Oxygen by Assumed Stoichiometry
- •19.7.3 Element by Difference
- •19.8 Ways of Reporting Composition
- •19.8.1 Mass Fraction
- •19.8.2 Atomic Fraction
- •19.8.3 Stoichiometry
- •19.8.4 Oxide Fractions
- •Example Calculations
- •19.9 The Accuracy of Quantitative Electron-Excited X-ray Microanalysis
- •19.9.1 Standards-Based k-ratio Protocol
- •19.9.2 “Standardless Analysis”
- •19.10 Appendix
- •19.10.1 The Need for Matrix Corrections To Achieve Quantitative Analysis
- •19.10.2 The Physical Origin of Matrix Effects
- •19.10.3 ZAF Factors in Microanalysis
- •X-ray Generation With Depth, φ(ρz)
- •X-ray Absorption Effect, A
- •X-ray Fluorescence, F
- •References
- •20.2 Instrumentation Requirements
- •20.2.1 Choosing the EDS Parameters
- •EDS Spectrum Channel Energy Width and Spectrum Energy Span
- •EDS Time Constant (Resolution and Throughput)
- •EDS Calibration
- •EDS Solid Angle
- •20.2.2 Choosing the Beam Energy, E0
- •20.2.3 Measuring the Beam Current
- •20.2.4 Choosing the Beam Current
- •Optimizing Analysis Strategy
- •20.3.4 Ba-Ti Interference in BaTiSi3O9
- •20.4 The Need for an Iterative Qualitative and Quantitative Analysis Strategy
- •20.4.2 Analysis of a Stainless Steel
- •20.5 Is the Specimen Homogeneous?
- •20.6 Beam-Sensitive Specimens
- •20.6.1 Alkali Element Migration
- •20.6.2 Materials Subject to Mass Loss During Electron Bombardment—the Marshall-Hall Method
- •Thin Section Analysis
- •Bulk Biological and Organic Specimens
- •References
- •21: Trace Analysis by SEM/EDS
- •21.1 Limits of Detection for SEM/EDS Microanalysis
- •21.2.1 Estimating CDL from a Trace or Minor Constituent from Measuring a Known Standard
- •21.2.2 Estimating CDL After Determination of a Minor or Trace Constituent with Severe Peak Interference from a Major Constituent
- •21.3 Measurements of Trace Constituents by Electron-Excited Energy Dispersive X-ray Spectrometry
- •The Inevitable Physics of Remote Excitation Within the Specimen: Secondary Fluorescence Beyond the Electron Interaction Volume
- •Simulation of Long-Range Secondary X-ray Fluorescence
- •NIST DTSA II Simulation: Vertical Interface Between Two Regions of Different Composition in a Flat Bulk Target
- •NIST DTSA II Simulation: Cubic Particle Embedded in a Bulk Matrix
- •21.5 Summary
- •References
- •22.1.2 Low Beam Energy Analysis Range
- •22.2 Advantage of Low Beam Energy X-Ray Microanalysis
- •22.2.1 Improved Spatial Resolution
- •22.3 Challenges and Limitations of Low Beam Energy X-Ray Microanalysis
- •22.3.1 Reduced Access to Elements
- •22.3.3 At Low Beam Energy, Almost Everything Is Found To Be Layered
- •Analysis of Surface Contamination
- •References
- •23: Analysis of Specimens with Special Geometry: Irregular Bulk Objects and Particles
- •23.2.1 No Chemical Etching
- •23.3 Consequences of Attempting Analysis of Bulk Materials With Rough Surfaces
- •23.4.1 The Raw Analytical Total
- •23.4.2 The Shape of the EDS Spectrum
- •23.5 Best Practices for Analysis of Rough Bulk Samples
- •23.6 Particle Analysis
- •Particle Sample Preparation: Bulk Substrate
- •The Importance of Beam Placement
- •Overscanning
- •“Particle Mass Effect”
- •“Particle Absorption Effect”
- •The Analytical Total Reveals the Impact of Particle Effects
- •Does Overscanning Help?
- •23.6.6 Peak-to-Background (P/B) Method
- •Specimen Geometry Severely Affects the k-ratio, but Not the P/B
- •Using the P/B Correspondence
- •23.7 Summary
- •References
- •24: Compositional Mapping
- •24.2 X-Ray Spectrum Imaging
- •24.2.1 Utilizing XSI Datacubes
- •24.2.2 Derived Spectra
- •SUM Spectrum
- •MAXIMUM PIXEL Spectrum
- •24.3 Quantitative Compositional Mapping
- •24.4 Strategy for XSI Elemental Mapping Data Collection
- •24.4.1 Choosing the EDS Dead-Time
- •24.4.2 Choosing the Pixel Density
- •24.4.3 Choosing the Pixel Dwell Time
- •“Flash Mapping”
- •High Count Mapping
- •References
- •25.1 Gas Scattering Effects in the VPSEM
- •25.1.1 Why Doesn’t the EDS Collimator Exclude the Remote Skirt X-Rays?
- •25.2 What Can Be Done To Minimize gas Scattering in VPSEM?
- •25.2.2 Favorable Sample Characteristics
- •Particle Analysis
- •25.2.3 Unfavorable Sample Characteristics
- •References
- •26.1 Instrumentation
- •26.1.2 EDS Detector
- •26.1.3 Probe Current Measurement Device
- •Direct Measurement: Using a Faraday Cup and Picoammeter
- •A Faraday Cup
- •Electrically Isolated Stage
- •Indirect Measurement: Using a Calibration Spectrum
- •26.1.4 Conductive Coating
- •26.2 Sample Preparation
- •26.2.1 Standard Materials
- •26.2.2 Peak Reference Materials
- •26.3 Initial Set-Up
- •26.3.1 Calibrating the EDS Detector
- •Selecting a Pulse Process Time Constant
- •Energy Calibration
- •Quality Control
- •Sample Orientation
- •Detector Position
- •Probe Current
- •26.4 Collecting Data
- •26.4.1 Exploratory Spectrum
- •26.4.2 Experiment Optimization
- •26.4.3 Selecting Standards
- •26.4.4 Reference Spectra
- •26.4.5 Collecting Standards
- •26.4.6 Collecting Peak-Fitting References
- •26.5 Data Analysis
- •26.5.2 Quantification
- •26.6 Quality Check
- •Reference
- •27.2 Case Study: Aluminum Wire Failures in Residential Wiring
- •References
- •28: Cathodoluminescence
- •28.1 Origin
- •28.2 Measuring Cathodoluminescence
- •28.3 Applications of CL
- •28.3.1 Geology
- •Carbonado Diamond
- •Ancient Impact Zircons
- •28.3.2 Materials Science
- •Semiconductors
- •Lead-Acid Battery Plate Reactions
- •28.3.3 Organic Compounds
- •References
- •29.1.1 Single Crystals
- •29.1.2 Polycrystalline Materials
- •29.1.3 Conditions for Detecting Electron Channeling Contrast
- •Specimen Preparation
- •Instrument Conditions
- •29.2.1 Origin of EBSD Patterns
- •29.2.2 Cameras for EBSD Pattern Detection
- •29.2.3 EBSD Spatial Resolution
- •29.2.5 Steps in Typical EBSD Measurements
- •Sample Preparation for EBSD
- •Align Sample in the SEM
- •Check for EBSD Patterns
- •Adjust SEM and Select EBSD Map Parameters
- •Run the Automated Map
- •29.2.6 Display of the Acquired Data
- •29.2.7 Other Map Components
- •29.2.10 Application Example
- •Application of EBSD To Understand Meteorite Formation
- •29.2.11 Summary
- •Specimen Considerations
- •EBSD Detector
- •Selection of Candidate Crystallographic Phases
- •Microscope Operating Conditions and Pattern Optimization
- •Selection of EBSD Acquisition Parameters
- •Collect the Orientation Map
- •References
- •30.1 Introduction
- •30.2 Ion–Solid Interactions
- •30.3 Focused Ion Beam Systems
- •30.5 Preparation of Samples for SEM
- •30.5.1 Cross-Section Preparation
- •30.5.2 FIB Sample Preparation for 3D Techniques and Imaging
- •30.6 Summary
- •References
- •31: Ion Beam Microscopy
- •31.1 What Is So Useful About Ions?
- •31.2 Generating Ion Beams
- •31.3 Signal Generation in the HIM
- •31.5 Patterning with Ion Beams
- •31.7 Chemical Microanalysis with Ion Beams
- •References
- •Appendix
- •A Database of Electron–Solid Interactions
- •A Database of Electron–Solid Interactions
- •Introduction
- •Backscattered Electrons
- •Secondary Yields
- •Stopping Powers
- •X-ray Ionization Cross Sections
- •Conclusions
- •References
- •Index
- •Reference List
- •Index
5.2 · Electron Optical Parameters
ing voltage, so the corresponding settings would be 30 keV for high beam energy work and 1 keV for low-voltage operation. In informal conversation it is common to hear 30 kV and 30 keV used interchangeably to mean the same beam setting, and usually no confusion arises from this practice. However, in written documents such as reports of analyses or academic publications, the common error of describing the beam energy using units of kilovolts or of recording the accelerating voltage in units of kilo-electronvolts should be avoided.
Landing Energy
Aside from this possible confusion between beam energy and accelerating potential, there are other subtleties in the proper characterization of the beam energy in the SEM. Depending on the technology used by the microscope manufacturer, the electrons in the microscope may change energy more than once during their path from the electron source to the surface of the sample. Some microscopes seek to improve imaging performance by modifying the electrons’ energy during the mid-portion of the optical column. On more recent microscope models it is increasingly common to see beam deceleration options, which decrease the beam energy just before the electrons emerge from the objective lens.
Also common on modern instruments is the option to apply a voltage bias to the sample itself, thus allowing the SEM operator to increase the energy of the electrons as they approach the sample (in the case of a positive sample bias), or decrease the energy of the electrons (in the case of a negative sample bias). For example, if the electron beam emerges from the objective lens into the SEM sample chamber with a beam energy of 5 keV, but the sample has a negative voltage bias of 1 kV applied, the electrons will be decelerated to an energy of 4 keV when they impact the specimen.
The term used to describe the electron beam energy at the point of impact on the sample surface is landing energy, usually denoted by the symbol El. The physics of beam–speci- men interaction depends only on the landing energy of the electrons, not on their energy at points further up the optical path. Critically important phenomena such as the size of the excitation volume in the specimen, the number of characteristic X-ray peaks available for use in compositional measurements, or the high energy limit of continuum X-rays emitted (the Duane–Hunt limit) are all functions of the landing energy, not the initial beam energy. Because of this, it is very important for the SEM operator to understand when landing energy differs from the beam energy at the objective lens final aperture, and how to control the value of the landing energy. The details of such subtleties vary from one vendor to another, and even from one microscope model to the next, but they are invariably described in the user documentation for every instrument. Seek help from your microscope’s customer support team or an application engineer if you are not absolutely clear on how to control the landing energy on your microscope. In many situations, particularly when working with older microscopes, this distinction is not important and the terms beam energy and landing energy may be used
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interchangeably without a problem, but when the distinction matters it can be crucial to accurate analysis and proper communication or reporting.
5.2.2\ Beam Diameter
Another important electron beam characteristic under the control of the SEM operator is the diameter of the electron beam, which in most cases refers to the diameter of the beam as it impacts the sample surface. Beam diameter has units of length and is frequently measured in nanometers, Ångstroms, or micrometers, depending on the size of the beam. For most SEM applications the beam diameter will fall within the broad range of 1 nm to 1 μm. It is commonly represented by
the symbol d, or a subscripted variant such as dprobe or dp. Before developing an understanding of the importance of
beam–specimen interactions, many SEM operators naively assume that the resolution of their SEM images is dictated solely by the beam diameter. While this may be true in some situations, more often the relationship between the beam diameter and the resolution is a complex one. Perhaps this explains why the exact definition of beam diameter is not always provided, even in relatively careful writing or formal contexts. The simplest model of an electron beam is one where the beam has a circular cross section at all times, and that the electrons are distributed with uniform intensity everywhere inside the beam diameter and are completely absent outside the beam diameter. In this trivial case, the beam has hard boundaries and is the same size no matter which azimuth you use to measure it. In reality the electron beam in an SEM is much more complicated. Even if you assume that the cross section is circular, electron beams exhibit a gradient of electron density from the core of the beam out to the edges, and in many cases have a tail of faint intensity that extends quite far from the central flux. It is still possible in these case to define the meaning of beam diameter in a precise way, in terms of the full width at half- maximum of the intensity for example, or the full width at tenth-maximum if the tails are pronounced. More careful statistical models of the beam will specify the radial intensity distribution function—a Gaussian or Lorentzian distribution, for example—and will allow for non-circularity. In most situations where such precision is not warranted, however, it will suffice to assume that the beam diameter is a single number that characterizes the width in nanometers of that portion of the beam that gives rise to the most important fraction of the contrast or sample excitation as measured at the surface of the specimen.
5.2.3\ Beam Current
Of all the electron beam parameters that matter to the SEM operator, beam current is perhaps highest on the list.
Fortunately it is a relatively simple parameter to understand since it is entirely analogous to electrical currents of the kind
\68 Chapter 5 · Scanning Electron Microscope (SEM) Instrumentation
found in wires, electronics, or electrical engineering. Beam current at the sample surface is a measure of the number of electrons per second that impact the specimen. It is usually measured in fractions of an ampere, such as microamperes (μA), nanoamperes (nA), or picoamperes (pA). A typical SEM beam current is about 1 nA, which corresponds to 6.25 × 109 electrons per second, or approximately one electron striking the sample every 160 ps . The usual symbol used to represent beam current is I, or i, or a subscripted variant such
as Iprobe, Ibeam, Ip, or Ib.
5
5.2.4\ Beam Current Density
Similar to the beam current, the concept of current density is relatively easy to understand and corresponds directly with the same concept in electrical engineering or electrical design. Current density in an electron beam is defined as the beam current per unit area, and it is usually represented by
the symbol J, or Jbeam. In standard units this quantity is expressed in A/m2, but there are also derived units better
suited to the SEM such as nA/nm2 or similar. The most important thing to understand about current density is that it is an areal measure, not an absolute measure; this means the current depends directly on and varies linearly with the area of the region through which the stated current density passes.
To make this concrete, let’s consider an example calculation of the current density in an electron beam. . Figure 5.2 shows a circular beam with a diameter of 5 nm; and the total current inside the circular beam spot is 1 nA. The area of the beam is
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and therefore the current density in the round beam is
a Current density = 50.9 pA/nm2
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. Figure 5.2b shows the situation if you decrease the diameter of the beam by half, from 5 nm to 2.5 nm, yet keep the same total current in the beam. Now the area has gotten smaller, yet the current is unchanged, so the current density has increased. The new current density is
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Since focusing the electron beam in an SEM changes the diameter of the beam but does not change the beam current, the current density must change. As can be seen in . Fig. 5.2, shrinking the beam width by a factor of two results in a fourfold increase in beam current density.
5.2.5\ Beam Convergence Angle, α
One of the fundamental characteristics of the electron beam found in all SEM instruments is that the shape of the beam as seen from the side is not a parallel-sided cylinder like a pencil, but rather a cone. The beam is wide where it exits the final aperture of the objective lens, and narrows steadily until (if the sample is in focus) it converges to a very small spot when it enters the specimen. A schematic of this cone is shown in
. Fig. 5.3. The point where the beam lands on the sample is denoted S at the bottom of the cone, and the beam-defining aperture is shown in perspective as a circle at the top of the cone, with line segment AB equal to the diameter of that aperture, dapt. The vertical dashed line represents the optical axis of the SEM column, which ideally passes through the center of the final aperture, is perpendicular to the plane of that aperture, and extends down through the chamber into the sample and beyond. The sides of the cone are defined by the “edge” of the electron beam. As mentioned above in the definition of the beam diameter, this notion of a hard-edged
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. Fig 5.2 a Current density in a circular electron beam; b current density if the beam diameter is reduced by a factor of two with the same current
. Fig. 5.3 a Definition of beam cone opening angle 2α; b definition of beam convergence (half) angle α
5.2 · Electron Optical Parameters
beam may not be physically realistic, but it is simple to understand and works well for our purposes here of understanding basic beam parameters.
In geometry, the opening angle of a cone is defined as the vertex angle ASB at the point of the cone, as shown in
. Fig. 5.3a. When working with the electron optics of an SEM, by convention we use the term convergence angle to describe how quickly the electron beam narrows to its focus as it travels down the optic axis. This convergence angle is shown in . Fig. 5.3b as α, which is half of the cone opening angle. In some cases, the beam convergence angle is referred to as the convergence half-angle to emphasize that only half of the opening angle is intended.
Generally the numerical value of the beam convergence angle in the SEM is quite small, and the electron beam cones are much sharper and narrower than the cones used for schematic purposes in . Fig. 5.3. In fact, if you ground down and reshaped the sides of a sewing needle so that it was a true cone instead of a cylinder sharpened only at the tip, you would then have a cone whose size and shape is reasonably close to the dimensions found in the SEM.
Estimating the value of the convergence angle of an electron beam is not difficult using the triangles drawn in
. Fig. 5.3. The length of the vertical dashed line along the optical axis is called the working distance, usually denoted by the symbol W. It is merely the distance from the bottom of the objective lens pole piece (taken here to be approximately the same plane as the final aperture) to the point at which the beam converges, which is typically also the surface of the sample if the sample is in focus. In practical SEM configurations this distance can be as small as a fraction of a millimeter or as large as tens of millimeters or a few centimeters, but in most situations W will be between 1 mm and 5 mm or so. The diameter of the wide end of the cone, line segment AB, is the aperture diameter, dapt. This can also vary widely depending on the SEM model and the choices made by the operator, but it is certainly no larger than a fraction of a millimeter and can be much smaller, on the order of micrometers. For purposes of concreteness, let’s assume W is 5 mm (i.e., 5000 μm) and the aperture is 50 μm in diameter (25 μm
in radius, denoted rapt).
From . Fig. 5.3b we can see that triangle ASB is composed of two back-to-back right triangles. The rightmost of these has its vertex angle labeled α. The leg of that triangle adjacent to α is the working distance W, the opposite leg is
the aperture radius rapt, and the hypotenuse of the right triangle is the slant length of the beam cone, SB. From basic
trigonometry we know that the tangent of the angle is equal to the length of its opposite leg divided by its adjacent leg, or
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It is no coincidence that the arc tangent of 0.005 is almost exactly equal to 0.005 radians, since a well-known approximation in trigonometry is that
tan−1 q = q. \ |
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Since in every practical case encountered in SEM imaging the angle will be sufficiently small to justify this approximation, we can write our estimate of the convergence angle in a much simpler form that does not require any trigonometric functions,
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As mentioned earlier, this angle is quite small, approximately equal to 0.25° or about 17 arc minutes.
5.2.6\ Beam Solid Angle
In the previous section we defined the beam convergence angle in terms of 2D geometry and characterized it by a planar angle measured in the dimensionless units of radians. However, the electron beam forms a 3D cone, not a 2D triangle, so in reality it subtends a solid angle. This is a concept used in 3D geometry to describe the angular spread of a converging (or diverging) flux. The usual symbol for solid angle is Ω, and its units of measure are called steradians, abbreviated sr. Usually when solid angles are discussed in the context of the SEM they are used to describe the acceptance angle of an X-ray spectrometer, or sometimes a backscattered electron detector, but they are also important in fully describing the electron optical parameters of the primary beam in the SEM as well as the properties of electron guns.
. Figure 5.4 shows the conical electron beam in 3D, emerging from the circular beam-defining aperture at the top
dapt
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W
. Fig. 5.4 Definition of beam solid angle, Ω. The vertical dashed line represents the optical axis of the SEM, and the distance from the aperture plane to the beam impact point is the working distance, W. This is also the radius of the imaginary hemisphere used to visualize the solid angle