- •Preface
- •Imaging Microscopic Features
- •Measuring the Crystal Structure
- •References
- •Contents
- •1.4 Simulating the Effects of Elastic Scattering: Monte Carlo Calculations
- •What Are the Main Features of the Beam Electron Interaction Volume?
- •How Does the Interaction Volume Change with Composition?
- •How Does the Interaction Volume Change with Incident Beam Energy?
- •How Does the Interaction Volume Change with Specimen Tilt?
- •1.5 A Range Equation To Estimate the Size of the Interaction Volume
- •References
- •2: Backscattered Electrons
- •2.1 Origin
- •2.2.1 BSE Response to Specimen Composition (η vs. Atomic Number, Z)
- •SEM Image Contrast with BSE: “Atomic Number Contrast”
- •SEM Image Contrast: “BSE Topographic Contrast—Number Effects”
- •2.2.3 Angular Distribution of Backscattering
- •Beam Incident at an Acute Angle to the Specimen Surface (Specimen Tilt > 0°)
- •SEM Image Contrast: “BSE Topographic Contrast—Trajectory Effects”
- •2.2.4 Spatial Distribution of Backscattering
- •Depth Distribution of Backscattering
- •Radial Distribution of Backscattered Electrons
- •2.3 Summary
- •References
- •3: Secondary Electrons
- •3.1 Origin
- •3.2 Energy Distribution
- •3.3 Escape Depth of Secondary Electrons
- •3.8 Spatial Characteristics of Secondary Electrons
- •References
- •4: X-Rays
- •4.1 Overview
- •4.2 Characteristic X-Rays
- •4.2.1 Origin
- •4.2.2 Fluorescence Yield
- •4.2.3 X-Ray Families
- •4.2.4 X-Ray Nomenclature
- •4.2.6 Characteristic X-Ray Intensity
- •Isolated Atoms
- •X-Ray Production in Thin Foils
- •X-Ray Intensity Emitted from Thick, Solid Specimens
- •4.3 X-Ray Continuum (bremsstrahlung)
- •4.3.1 X-Ray Continuum Intensity
- •4.3.3 Range of X-ray Production
- •4.4 X-Ray Absorption
- •4.5 X-Ray Fluorescence
- •References
- •5.1 Electron Beam Parameters
- •5.2 Electron Optical Parameters
- •5.2.1 Beam Energy
- •Landing Energy
- •5.2.2 Beam Diameter
- •5.2.3 Beam Current
- •5.2.4 Beam Current Density
- •5.2.5 Beam Convergence Angle, α
- •5.2.6 Beam Solid Angle
- •5.2.7 Electron Optical Brightness, β
- •Brightness Equation
- •5.2.8 Focus
- •Astigmatism
- •5.3 SEM Imaging Modes
- •5.3.1 High Depth-of-Field Mode
- •5.3.2 High-Current Mode
- •5.3.3 Resolution Mode
- •5.3.4 Low-Voltage Mode
- •5.4 Electron Detectors
- •5.4.1 Important Properties of BSE and SE for Detector Design and Operation
- •Abundance
- •Angular Distribution
- •Kinetic Energy Response
- •5.4.2 Detector Characteristics
- •Angular Measures for Electron Detectors
- •Elevation (Take-Off) Angle, ψ, and Azimuthal Angle, ζ
- •Solid Angle, Ω
- •Energy Response
- •Bandwidth
- •5.4.3 Common Types of Electron Detectors
- •Backscattered Electrons
- •Passive Detectors
- •Scintillation Detectors
- •Semiconductor BSE Detectors
- •5.4.4 Secondary Electron Detectors
- •Everhart–Thornley Detector
- •Through-the-Lens (TTL) Electron Detectors
- •TTL SE Detector
- •TTL BSE Detector
- •Measuring the DQE: BSE Semiconductor Detector
- •References
- •6: Image Formation
- •6.1 Image Construction by Scanning Action
- •6.2 Magnification
- •6.3 Making Dimensional Measurements With the SEM: How Big Is That Feature?
- •Using a Calibrated Structure in ImageJ-Fiji
- •6.4 Image Defects
- •6.4.1 Projection Distortion (Foreshortening)
- •6.4.2 Image Defocusing (Blurring)
- •6.5 Making Measurements on Surfaces With Arbitrary Topography: Stereomicroscopy
- •6.5.1 Qualitative Stereomicroscopy
- •Fixed beam, Specimen Position Altered
- •Fixed Specimen, Beam Incidence Angle Changed
- •6.5.2 Quantitative Stereomicroscopy
- •Measuring a Simple Vertical Displacement
- •References
- •7: SEM Image Interpretation
- •7.1 Information in SEM Images
- •7.2.2 Calculating Atomic Number Contrast
- •Establishing a Robust Light-Optical Analogy
- •Getting It Wrong: Breaking the Light-Optical Analogy of the Everhart–Thornley (Positive Bias) Detector
- •Deconstructing the SEM/E–T Image of Topography
- •SUM Mode (A + B)
- •DIFFERENCE Mode (A−B)
- •References
- •References
- •9: Image Defects
- •9.1 Charging
- •9.1.1 What Is Specimen Charging?
- •9.1.3 Techniques to Control Charging Artifacts (High Vacuum Instruments)
- •Observing Uncoated Specimens
- •Coating an Insulating Specimen for Charge Dissipation
- •Choosing the Coating for Imaging Morphology
- •9.2 Radiation Damage
- •9.3 Contamination
- •References
- •10: High Resolution Imaging
- •10.2 Instrumentation Considerations
- •10.4.1 SE Range Effects Produce Bright Edges (Isolated Edges)
- •10.4.4 Too Much of a Good Thing: The Bright Edge Effect Hinders Locating the True Position of an Edge for Critical Dimension Metrology
- •10.5.1 Beam Energy Strategies
- •Low Beam Energy Strategy
- •High Beam Energy Strategy
- •Making More SE1: Apply a Thin High-δ Metal Coating
- •Making Fewer BSEs, SE2, and SE3 by Eliminating Bulk Scattering From the Substrate
- •10.6 Factors That Hinder Achieving High Resolution
- •10.6.2 Pathological Specimen Behavior
- •Contamination
- •Instabilities
- •References
- •11: Low Beam Energy SEM
- •11.3 Selecting the Beam Energy to Control the Spatial Sampling of Imaging Signals
- •11.3.1 Low Beam Energy for High Lateral Resolution SEM
- •11.3.2 Low Beam Energy for High Depth Resolution SEM
- •11.3.3 Extremely Low Beam Energy Imaging
- •References
- •12.1.1 Stable Electron Source Operation
- •12.1.2 Maintaining Beam Integrity
- •12.1.4 Minimizing Contamination
- •12.3.1 Control of Specimen Charging
- •12.5 VPSEM Image Resolution
- •References
- •13: ImageJ and Fiji
- •13.1 The ImageJ Universe
- •13.2 Fiji
- •13.3 Plugins
- •13.4 Where to Learn More
- •References
- •14: SEM Imaging Checklist
- •14.1.1 Conducting or Semiconducting Specimens
- •14.1.2 Insulating Specimens
- •14.2 Electron Signals Available
- •14.2.1 Beam Electron Range
- •14.2.2 Backscattered Electrons
- •14.2.3 Secondary Electrons
- •14.3 Selecting the Electron Detector
- •14.3.2 Backscattered Electron Detectors
- •14.3.3 “Through-the-Lens” Detectors
- •14.4 Selecting the Beam Energy for SEM Imaging
- •14.4.4 High Resolution SEM Imaging
- •Strategy 1
- •Strategy 2
- •14.5 Selecting the Beam Current
- •14.5.1 High Resolution Imaging
- •14.5.2 Low Contrast Features Require High Beam Current and/or Long Frame Time to Establish Visibility
- •14.6 Image Presentation
- •14.6.1 “Live” Display Adjustments
- •14.6.2 Post-Collection Processing
- •14.7 Image Interpretation
- •14.7.1 Observer’s Point of View
- •14.7.3 Contrast Encoding
- •14.8.1 VPSEM Advantages
- •14.8.2 VPSEM Disadvantages
- •15: SEM Case Studies
- •15.1 Case Study: How High Is That Feature Relative to Another?
- •15.2 Revealing Shallow Surface Relief
- •16.1.2 Minor Artifacts: The Si-Escape Peak
- •16.1.3 Minor Artifacts: Coincidence Peaks
- •16.1.4 Minor Artifacts: Si Absorption Edge and Si Internal Fluorescence Peak
- •16.2 “Best Practices” for Electron-Excited EDS Operation
- •16.2.1 Operation of the EDS System
- •Choosing the EDS Time Constant (Resolution and Throughput)
- •Choosing the Solid Angle of the EDS
- •Selecting a Beam Current for an Acceptable Level of System Dead-Time
- •16.3.1 Detector Geometry
- •16.3.2 Process Time
- •16.3.3 Optimal Working Distance
- •16.3.4 Detector Orientation
- •16.3.5 Count Rate Linearity
- •16.3.6 Energy Calibration Linearity
- •16.3.7 Other Items
- •16.3.8 Setting Up a Quality Control Program
- •Using the QC Tools Within DTSA-II
- •Creating a QC Project
- •Linearity of Output Count Rate with Live-Time Dose
- •Resolution and Peak Position Stability with Count Rate
- •Solid Angle for Low X-ray Flux
- •Maximizing Throughput at Moderate Resolution
- •References
- •17: DTSA-II EDS Software
- •17.1 Getting Started With NIST DTSA-II
- •17.1.1 Motivation
- •17.1.2 Platform
- •17.1.3 Overview
- •17.1.4 Design
- •Simulation
- •Quantification
- •Experiment Design
- •Modeled Detectors (. Fig. 17.1)
- •Window Type (. Fig. 17.2)
- •The Optimal Working Distance (. Figs. 17.3 and 17.4)
- •Elevation Angle
- •Sample-to-Detector Distance
- •Detector Area
- •Crystal Thickness
- •Number of Channels, Energy Scale, and Zero Offset
- •Resolution at Mn Kα (Approximate)
- •Azimuthal Angle
- •Gold Layer, Aluminum Layer, Nickel Layer
- •Dead Layer
- •Zero Strobe Discriminator (. Figs. 17.7 and 17.8)
- •Material Editor Dialog (. Figs. 17.9, 17.10, 17.11, 17.12, 17.13, and 17.14)
- •17.2.1 Introduction
- •17.2.2 Monte Carlo Simulation
- •17.2.4 Optional Tables
- •References
- •18: Qualitative Elemental Analysis by Energy Dispersive X-Ray Spectrometry
- •18.1 Quality Assurance Issues for Qualitative Analysis: EDS Calibration
- •18.2 Principles of Qualitative EDS Analysis
- •Exciting Characteristic X-Rays
- •Fluorescence Yield
- •X-ray Absorption
- •Si Escape Peak
- •Coincidence Peaks
- •18.3 Performing Manual Qualitative Analysis
- •Beam Energy
- •Choosing the EDS Resolution (Detector Time Constant)
- •Obtaining Adequate Counts
- •18.4.1 Employ the Available Software Tools
- •18.4.3 Lower Photon Energy Region
- •18.4.5 Checking Your Work
- •18.5 A Worked Example of Manual Peak Identification
- •References
- •19.1 What Is a k-ratio?
- •19.3 Sets of k-ratios
- •19.5 The Analytical Total
- •19.6 Normalization
- •19.7.1 Oxygen by Assumed Stoichiometry
- •19.7.3 Element by Difference
- •19.8 Ways of Reporting Composition
- •19.8.1 Mass Fraction
- •19.8.2 Atomic Fraction
- •19.8.3 Stoichiometry
- •19.8.4 Oxide Fractions
- •Example Calculations
- •19.9 The Accuracy of Quantitative Electron-Excited X-ray Microanalysis
- •19.9.1 Standards-Based k-ratio Protocol
- •19.9.2 “Standardless Analysis”
- •19.10 Appendix
- •19.10.1 The Need for Matrix Corrections To Achieve Quantitative Analysis
- •19.10.2 The Physical Origin of Matrix Effects
- •19.10.3 ZAF Factors in Microanalysis
- •X-ray Generation With Depth, φ(ρz)
- •X-ray Absorption Effect, A
- •X-ray Fluorescence, F
- •References
- •20.2 Instrumentation Requirements
- •20.2.1 Choosing the EDS Parameters
- •EDS Spectrum Channel Energy Width and Spectrum Energy Span
- •EDS Time Constant (Resolution and Throughput)
- •EDS Calibration
- •EDS Solid Angle
- •20.2.2 Choosing the Beam Energy, E0
- •20.2.3 Measuring the Beam Current
- •20.2.4 Choosing the Beam Current
- •Optimizing Analysis Strategy
- •20.3.4 Ba-Ti Interference in BaTiSi3O9
- •20.4 The Need for an Iterative Qualitative and Quantitative Analysis Strategy
- •20.4.2 Analysis of a Stainless Steel
- •20.5 Is the Specimen Homogeneous?
- •20.6 Beam-Sensitive Specimens
- •20.6.1 Alkali Element Migration
- •20.6.2 Materials Subject to Mass Loss During Electron Bombardment—the Marshall-Hall Method
- •Thin Section Analysis
- •Bulk Biological and Organic Specimens
- •References
- •21: Trace Analysis by SEM/EDS
- •21.1 Limits of Detection for SEM/EDS Microanalysis
- •21.2.1 Estimating CDL from a Trace or Minor Constituent from Measuring a Known Standard
- •21.2.2 Estimating CDL After Determination of a Minor or Trace Constituent with Severe Peak Interference from a Major Constituent
- •21.3 Measurements of Trace Constituents by Electron-Excited Energy Dispersive X-ray Spectrometry
- •The Inevitable Physics of Remote Excitation Within the Specimen: Secondary Fluorescence Beyond the Electron Interaction Volume
- •Simulation of Long-Range Secondary X-ray Fluorescence
- •NIST DTSA II Simulation: Vertical Interface Between Two Regions of Different Composition in a Flat Bulk Target
- •NIST DTSA II Simulation: Cubic Particle Embedded in a Bulk Matrix
- •21.5 Summary
- •References
- •22.1.2 Low Beam Energy Analysis Range
- •22.2 Advantage of Low Beam Energy X-Ray Microanalysis
- •22.2.1 Improved Spatial Resolution
- •22.3 Challenges and Limitations of Low Beam Energy X-Ray Microanalysis
- •22.3.1 Reduced Access to Elements
- •22.3.3 At Low Beam Energy, Almost Everything Is Found To Be Layered
- •Analysis of Surface Contamination
- •References
- •23: Analysis of Specimens with Special Geometry: Irregular Bulk Objects and Particles
- •23.2.1 No Chemical Etching
- •23.3 Consequences of Attempting Analysis of Bulk Materials With Rough Surfaces
- •23.4.1 The Raw Analytical Total
- •23.4.2 The Shape of the EDS Spectrum
- •23.5 Best Practices for Analysis of Rough Bulk Samples
- •23.6 Particle Analysis
- •Particle Sample Preparation: Bulk Substrate
- •The Importance of Beam Placement
- •Overscanning
- •“Particle Mass Effect”
- •“Particle Absorption Effect”
- •The Analytical Total Reveals the Impact of Particle Effects
- •Does Overscanning Help?
- •23.6.6 Peak-to-Background (P/B) Method
- •Specimen Geometry Severely Affects the k-ratio, but Not the P/B
- •Using the P/B Correspondence
- •23.7 Summary
- •References
- •24: Compositional Mapping
- •24.2 X-Ray Spectrum Imaging
- •24.2.1 Utilizing XSI Datacubes
- •24.2.2 Derived Spectra
- •SUM Spectrum
- •MAXIMUM PIXEL Spectrum
- •24.3 Quantitative Compositional Mapping
- •24.4 Strategy for XSI Elemental Mapping Data Collection
- •24.4.1 Choosing the EDS Dead-Time
- •24.4.2 Choosing the Pixel Density
- •24.4.3 Choosing the Pixel Dwell Time
- •“Flash Mapping”
- •High Count Mapping
- •References
- •25.1 Gas Scattering Effects in the VPSEM
- •25.1.1 Why Doesn’t the EDS Collimator Exclude the Remote Skirt X-Rays?
- •25.2 What Can Be Done To Minimize gas Scattering in VPSEM?
- •25.2.2 Favorable Sample Characteristics
- •Particle Analysis
- •25.2.3 Unfavorable Sample Characteristics
- •References
- •26.1 Instrumentation
- •26.1.2 EDS Detector
- •26.1.3 Probe Current Measurement Device
- •Direct Measurement: Using a Faraday Cup and Picoammeter
- •A Faraday Cup
- •Electrically Isolated Stage
- •Indirect Measurement: Using a Calibration Spectrum
- •26.1.4 Conductive Coating
- •26.2 Sample Preparation
- •26.2.1 Standard Materials
- •26.2.2 Peak Reference Materials
- •26.3 Initial Set-Up
- •26.3.1 Calibrating the EDS Detector
- •Selecting a Pulse Process Time Constant
- •Energy Calibration
- •Quality Control
- •Sample Orientation
- •Detector Position
- •Probe Current
- •26.4 Collecting Data
- •26.4.1 Exploratory Spectrum
- •26.4.2 Experiment Optimization
- •26.4.3 Selecting Standards
- •26.4.4 Reference Spectra
- •26.4.5 Collecting Standards
- •26.4.6 Collecting Peak-Fitting References
- •26.5 Data Analysis
- •26.5.2 Quantification
- •26.6 Quality Check
- •Reference
- •27.2 Case Study: Aluminum Wire Failures in Residential Wiring
- •References
- •28: Cathodoluminescence
- •28.1 Origin
- •28.2 Measuring Cathodoluminescence
- •28.3 Applications of CL
- •28.3.1 Geology
- •Carbonado Diamond
- •Ancient Impact Zircons
- •28.3.2 Materials Science
- •Semiconductors
- •Lead-Acid Battery Plate Reactions
- •28.3.3 Organic Compounds
- •References
- •29.1.1 Single Crystals
- •29.1.2 Polycrystalline Materials
- •29.1.3 Conditions for Detecting Electron Channeling Contrast
- •Specimen Preparation
- •Instrument Conditions
- •29.2.1 Origin of EBSD Patterns
- •29.2.2 Cameras for EBSD Pattern Detection
- •29.2.3 EBSD Spatial Resolution
- •29.2.5 Steps in Typical EBSD Measurements
- •Sample Preparation for EBSD
- •Align Sample in the SEM
- •Check for EBSD Patterns
- •Adjust SEM and Select EBSD Map Parameters
- •Run the Automated Map
- •29.2.6 Display of the Acquired Data
- •29.2.7 Other Map Components
- •29.2.10 Application Example
- •Application of EBSD To Understand Meteorite Formation
- •29.2.11 Summary
- •Specimen Considerations
- •EBSD Detector
- •Selection of Candidate Crystallographic Phases
- •Microscope Operating Conditions and Pattern Optimization
- •Selection of EBSD Acquisition Parameters
- •Collect the Orientation Map
- •References
- •30.1 Introduction
- •30.2 Ion–Solid Interactions
- •30.3 Focused Ion Beam Systems
- •30.5 Preparation of Samples for SEM
- •30.5.1 Cross-Section Preparation
- •30.5.2 FIB Sample Preparation for 3D Techniques and Imaging
- •30.6 Summary
- •References
- •31: Ion Beam Microscopy
- •31.1 What Is So Useful About Ions?
- •31.2 Generating Ion Beams
- •31.3 Signal Generation in the HIM
- •31.5 Patterning with Ion Beams
- •31.7 Chemical Microanalysis with Ion Beams
- •References
- •Appendix
- •A Database of Electron–Solid Interactions
- •A Database of Electron–Solid Interactions
- •Introduction
- •Backscattered Electrons
- •Secondary Yields
- •Stopping Powers
- •X-ray Ionization Cross Sections
- •Conclusions
- •References
- •Index
- •Reference List
- •Index
222\ Chapter 16 · Energy Dispersive X-ray Spectrometry: Physical Principles and User-Selected Parameters
. Fig. 16.14 Using a cell phone inclinometer to measure the elevation angle
correction. The elevation angle (usually sloppily called the “take-off angle”) is often a configuration option that may be available to you to modify or may require a service engineer. Usually you can check the elevation angle by opening a spectrum data file in a text editor. Most spectrum files are ASCII text files and the vendors write a line containing the elevation or nominal take-off angle.
Compare the value produced by the software with the physical position of your detector relative to the beam axis. Sometimes, the correct instrument specific value of the take- off angle will be handwritten in the EDS vendor’s documentation. Other times, you can extract the angle from instrument specific schematic diagrams from the SEM or EDS vendors. Regardless, it is a good idea to verify the elevation angle using a protractor or a smart phone. Many smart phones contain inclinometers which are accurate to within a degree and “bubble level apps” are available to turn the phone into a digital inclinometer. First, test the accuracy of the cell phone incli-
16 nometer using a 30-60-90 triangle or similar reference shape. Then use the cell phone to measure the angle of the snout relative to the angle of the column and calculate the elevation angle. . Figure 16.14 shows that a cell phone measures the elevation angle of this detector to within half a degree (90°– 54.5° = 35.5° ~ 35° nominal value). Achieving similar accuracy with a protractor and a bubble level is difficult.
16.3.2\ Process Time
The “process time” (also called the “throughput setting,” the “detector time constant,” the “resolution setting” or other names) determines how much time the detector electronics dedicates to processing each incoming X-ray. A longer “process time” tends to produce lower X-ray throughput but higher spectral resolution. Shorter “process times” tend to produce higher X-ray throughput but lower spectral resolution. By throughput, we mean the maximum number of X-rays that the detector can measure
per unit time. By spectral resolution we mean the width of a characteristic peak, usually taken to be the Mn K-L2,3 (Kα) peak.
Higher throughput is desirable because it allows you to use higher probe currents to produce more X-rays and produce measured spectra with a larger number of measured X-rays. Higher resolution is desirable because it becomes easier to distinguish characteristic peaks of similar energy. Both are virtues but one is achieved at the expense of the other.
The task of selecting a process time is the task of balancing good throughput with adequate resolution. At the best resolution settings, throughput is seriously compromised and as a result the precision of quantitative analysis is also compromised. At the highest throughput settings, resolution is compromised and it becomes much more difficult to distinguish interfering peaks.
Fortunately, resolution degrades relatively slowly while throughput increases quickly. Moderate pulse process times tend to degrade the ultimate resolution by a few percent, while increasing throughput by much larger factors. Every vendor is different but typically a moderate pulse process time will produce both adequate resolution and excellent throughput.
While some modern SDD are capable of ultimate resolutions of 122–128 eV, compromising the resolution to 130– 135 eV will produce an excellent compromise between resolution and throughput. Even a resolution of 140–150 eV at high throughputs can produce excellent quantitative results because the precision of spectrum fitting is more determined by the number of measured X-rays than the spectral resolution.
zz Check 2: Selecting a Process Time
55 Ensure that your EDS detector electronics are set to a moderate process time that produces a good throughput with a resolution within 5 eV of the best resolution. Record this parameter in your electronic notebook for future reference.
55 Do not use an “adaptive process time” for standards-based quantitative analysis. Adaptive process times allow the resolution to change with throughput making spectrum fitting challenging and less accurate.
The optimization of throughput is also confounded by an another practical limitation—coincident X-rays or pulse- pileup—and will be addressed in a later section.
16.3.3\ Optimal Working Distance
Nominally, the optimal working distance should be specified in instrument schematics. However, it is worth checking because it may vary slightly or there may be a mistake in
223 |
16 |
16.3 · Practical Aspects of Ensuring EDS Performance for a Quality Measurement Environment
design or manufacturing. From the detector geometry section, we know that the optimal working distance is the distance at which the axis along the detector snout intersects with the electron beam axis (see . Fig. 16.13). This working distance should also produce the largest flux of X-rays and be the distance which is least sensitive to slight errors in vertical positioning.
zz Check 3: Measuring the Optimal Working Distance
\1.\ Select a sample like a piece of copper and mount it perpendicular to the electron beam axis.
\2.\ Select a beam energy of 15–25 keV and a moderate probe current to produce ~ 20% dead time.
\3.\ Move the stage’s vertical axis to place the sample close to the objective lens pole piece. Be careful not to run the sample into a detector.
\4.\ Focus the image and record the working distance reported by your SEM’s software.
\5.\ Collect a 60 live-time second spectrum.
\6.\ Move the stage away from the objective lens pole piece in 1-mm steps.
\7.\ Repeat steps 4–6, taking the working distance through the nominal optimal working distance.
\8.\ Process the spectra. Extract the total number of counts in the energy range from about 100 eV to the beam energy and plot this number against the working distance.
\9.\ Determine the working distance which produces the largest number of counts. Since this working distance represents an inflection point, the slope will be minimum and thus the sensitivity with respect to working distance will also be minimized.
16.3.4\ Detector Orientation
In the previous section, we assumed that the principal axis of the detector snout is oriented to intersect with the electron beam axis. In other words, the detector points towards the sample. It is usually the EDS vendor’s responsibility to ensure that the mounting flange has been designed to correctly orient and position the detector. The next check will verify this.
The active face of an EDS detector is a planar area that is mounted perpendicular to the snout axis. In front of the
detector element there is usually a window and an electron trap. Most windows are ultrathin layers of polymer or silicon nitride mounted on a grid for mechanical strength. Examples of two support grids are given in . Fig. 16.15. While the grid may have an open area fraction of 75–80 %, the silicon or carbon grid bars are often very thick (0.38 mm) to enhance mechanical rigidity under the strain of up to one atmosphere of differential pressure. Off-axis the grid bars can occlude the direct transmission of X-rays from the sample to the detector element. Furthermore, the magnetic electron trap can also occlude X-rays from offaxis. As a result, an EDS detector is more sensitive to X-rays produced on the snout axis than slightly off the axis. The result is a position dependent efficiency which peaks on axis and decreases as the source of the X-rays is further from axis.
A wide field-of-view X-ray spectrum image can demonstrate the position sensitivity and can be used to ensure that the detector snout and detector active element are oriented correctly.
zz Check 4: Collect a Wide Field X-ray Spectrum Image
\1.\ Mount a flat, polished piece of Cu in your SEM.
\2.\ Image the Cu at the optimal working distance and at 20–25 keV to excite both the K and L lines.
\3.\ Find out how wide a field-of-view your SEM can image at the optimal working distance. The example in . Fig. 16.16 uses a 4-mm field-of-view.
\4.\ Collect a high count X-ray spectrum image from the Cu. Acquiring at a moderate-to-high probe current for an hour or more at 256 × 256-pixel image dimensions should produce sufficiently high signal-to-noise data.
\5.\ Process the data to extract and plot the raw intensities at each pixel in each of the Cu K-L2,3 and Cu L-family lines.
\1.\ It is important to extract the raw intensities and not the normalized intensities since we are looking for variation in the raw intensity as a function of position.
\2.\ The open source software ImageJ-Fiji (ImageJ plus additional tools) can be used to process spectrum image data if it can be converted to a RAW format.
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AP5 |
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380 |
265 |
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Rib width (µm) |
59 |
45 |
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Opening width (µm) |
190 |
190 |
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76% |
78% |
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72° |
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. Fig. 16.15 Window support grid dimensions for two common window types (Source: MOXTEK)
224\ Chapter 16 · Energy Dispersive X-ray Spectrometry: Physical Principles and User-Selected Parameters
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\6.\ |
Plot the data to demonstrate the variation of the |
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nished intensities leading to low analytical totals |
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intensity as a function of position. . Figure 16.16 |
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and sub-optimal quantitative results. |
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shows the map from a well-oriented detector plotted |
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\3.\ Typically, the Cu L-family peak is more sensitive |
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using a thermal color scheme in which red |
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due to absorption by the vacuum window support |
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represents the highest intensity and blue represents |
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grid’s Si ribs. . Figure 16.15 (source: Moxtek) |
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zero intensity. . Figure 16.17 shows traverses |
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extracted from the . Fig. 16.16 data on diagonals |
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grids. The vertical sensitivity is usually minimized |
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representing parallel to the detector axis and |
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by orienting the grid ribs vertically. |
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perpendicular to the detector axis. Verify that the |
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most intense region in the intensity plots is in the |
zz Sidebar: Processing a “RAW” Spectrum Image with |
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center of the image area. |
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\7.\ |
Note the extent of the region of uniform efficiency. |
ImageJ-Fiji |
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Variation from ideal uniform sensitivity has |
\1.\ Convert the X-ray spectrum image data into a RAW |
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consequences. |
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file. A RAW file is large binary representation of the |
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\1.\ Low magnification X-ray spectrum images will |
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data in the spectrum image. Each pixel in the |
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suffer from reduced intensity towards the edges. |
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spectrum image consists of a spectrum encode in an |
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\2.\ Point mode X-ray spectrum acquisitions collected |
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integer binary format. The pixels are organized in a |
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off the optical axis will also suffer from dimi |
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continuous array row-by-row. The size of the file is |
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typically equal to (channel depth) × (row |
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dimension) × (column dimensions) × (2 or 4 bytes |
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per integer value). |
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\2.\ |
Import the RAW data file into ImageJ using the |
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255.0 |
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Detector |
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“Import → Raw” tools to create a “stack” as shown in |
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. Fig. 16.18. |
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As imported, the orientation of the stack will depend |
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upon how the data in the RAW file is organized. |
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Regardless of the original orientation, you will need to |
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pivot the data a couple times using the “Image → |
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Stack → Reslice” tool. First, to identify the range of |
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0.0 |
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channels that represent the Cu L-family and Cu K-L |
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4 |
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intensities. Second, to align the spectrum data with 2,3 |
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the Z dimension so that the “Image → Stack → |
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Z-project” tool can be used to create plots representing |
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the intensities in the Cu L-family and Cu K-L2,3 |
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channels. |
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The initial view of the imported spectrum will |
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. Fig. 16.16 A 3D rendering of the intensity in the Cu K line over a |
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usually show the data as shown in . Fig. 16.19. In |
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4 mm by 4 mm mapped area. Created using ImageJ-Fiji |
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this view it is possible to identify the range of |
. Fig. 16.17 A plot of two diag onal traverses extracted from the 3D rendering. The blue dots are perpendicular to the detector axis and red are parallel. Created using ImageJ-Fiji
Intensity
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16.3 · Practical Aspects of Ensuring EDS Performance for a Quality Measurement Environment
channels to sum together for the Cu L-family and Cu
K-L2,3 lines. The Cu K-L2,3 lines are often quite dim. \5.\ Using the “Image → Stack → Reslice” tool (see
. Fig. 16.20) rotate the stack until it looks like
. Fig. 16.21
\6.\ Use the “Image → Stack → Z-project” twice (. Fig. 16.22) to extract the range of channels
identified in . Fig. 16.19 as associated with the Cu
L-family and Cu K-L2,3 lines.
\7.\ Convert the gray-scale image to a thermal scale using “Image → Lookup Tables → Thermal.”
\8.\ Convert the image to a plot using “Analyze → Surface Plot”
\9.\ Extract traverses from the image using the straight line tool to define the traverse and then the “Analyze → Plot Profile” tool to extract and plot the data.
16.3.5\ Count Rate Linearity
One of the most important circuits in an X-ray pulse processor accounts for the time during which the pulse processor is busy processing X-ray events. When the pulse processor is processing an X-ray, it is unavailable to process new incoming X-rays. This time is called “dead-time.” In contrast, the time during which the processor is not busy and is available is called “live-time.” The sum of “live-time” and “dead-time” is called “real-time” – the time you would measure using a wall clock.
For calculating the effective probe dose, live-time is the critical parameter. The effective probe dose consists of those electrons which could produce measurable X-rays. So the effective probe dose equals the live-time times the probe current. The effective probe dose is always less than the real probe dose, which is the product of the real time and the
. Fig. 16.18 Importing a RAW formatted spectrum image into |
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ImageJ-Fiji |
. Fig. 16.20 “Reslice” tool used to rotate the stack |
Cu L-family |
Cu K-L2,3 |
. Fig. 16.19 The spectrum image perspective as imported into ImageJ-Fiji. The bright strip is the Cu L-family while the much fainter band is Cu K-L2,3